6N Purity Crystalline Boron Pellets for Semiconductor Dopant

6N Purity Crystalline Boron Pellets for Semiconductor Dopant

Physical & Chemical Properties

Crystalline Boron,Cas No.7440-42-8, exists as grey-black powder with metallic luster, categorized as an atomic-crystal elemental boron. It is insoluble in water, ethanol and dilute acids, and only dissolves in mixed liquor of concentrated nitric acid and hydrofluoric acid. It does not react with alkalis at room temperature. At temperatures above 600 °C, it reacts with oxygen, nitrogen, carbon and other elements, featuring reducing properties as well as semiconductor characteristics: high resistivity at room temperature and improved electrical conductivity under high temperatures.

Product Advantages

BoronHub has independently developed the manufacturing process for crystalline boron, supplying composite molded products of β-type and γ-type with high crystallinity and robust chemical stability.

Standard specifications include powder of 15–60 μm and granules of 1–10 mm, with purity ranging from 2N to 6N (grades 4N–6N are specially reserved for single crystal silicon doping in the semiconductor industry).

Powder products are vacuum-packed in aluminum foil bags, while granules are hermetically stored in inert gas-filled PTFE bottles. The shelf life is 12 months, and customized purity and particle size are available upon request.

Crystalline Boron Enterprise Specification

 Package:It is usually packed in polytetrafluoroethylene bottles and sealed with inert gas, with specifications of 50g/100g/bottle;

What are the specific applications of Crystalline Boron?

I. Nuclear Industry

· Serves as a neutron reaction control material in nuclear reactors to regulate neutron velocity and maintain stable reactor operation.

· Leverages the exceptional neutron absorption capacity of crystalline boron to effectively reduce or adjust neutron flux, ensuring the safety of nuclear energy systems.

II. Semiconductor Applications

· P-type Dopant 

As a Group III element, crystalline Boron introduces acceptor levels in silicon and serves as the core dopant for fabricating P-type semiconductors. Through ion implantation or diffusion processes, precise control of doping concentration enables the formation of P-type wells or substrates in devices including diodes, field-effect transistors (FETs), and insulated-gate bipolar transistors (IGBTs).

· Preparation of P-type Monocrystalline Silicon 

During the growth of monocrystalline silicon via the Czochralski (CZ) or Float Zone (FZ) method, trace amounts of high-purity crystalline boron are added to the high-purity polycrystalline silicon melt. Leveraging the segregation effect of Boron in silicon, P-type silicon single crystals with controllable resistivity are obtained. Such single crystals act as fundamental substrate materials for discrete devices, analog integrated circuits, and power semiconductor devices.

· Source Material for Boron-doped Silicon Single Crystals

As a pure boron source, Crystalline Boron can be used to produce silicon single crystals with specified boron concentrations through melt co-doping. Compared with other boron sources (e.g., borane, Boron tribromide), Crystalline Boron offers superior purity stability and doping uniformity, making it suitable for customized substrate requirements in high-performance semiconductor devices such as detectors and high-voltage power chips.

· Purity Requirements

To ensure accurate doping profiles and high device yield, Crystalline Boron must meet semiconductor-grade purity (typically ≥99.9999%, i.e., 6N or higher). Metal impurities (e.g., Fe, Cu, Na) must be controlled at the ppb level, with strict limits on light-element impurities such as carbon and oxygen. Like N-type dopants including phosphorus, antimony, and arsenic, crystalline boron and its contact environment with silicon must be handled under ultra-clean conditions

 

III. Optics

· Utilizes its outstanding nonlinear optical properties to achieve functions including light modulation, frequency sweeping, and frequency doubling.

· Applied in the manufacture of optical devices such as optical modulators, optical frequency combs, and lasers.

· Serves as a gain medium for infrared lasers, featuring a large emission cross-section and a broad excitation spectral range.

 

IV. High-Hardness Materials

· Used in the production of boron carbide (B₄C), an ultra-hard ceramic material with excellent wear resistance and high-temperature stability, widely used in bulletproof vests, hard tools, abrasives, and wear-resistant ceramics.

· Used in the production of graphite Boron compounds (B₉), which have a graphite-like structure, high electrical conductivity, and thermal stability, suitable for high-performance conductive binders, thermal management materials, and friction materials.

V. Military & Aerospace

· High-purity Boron ceramic ballistic-resistant materials

· High-purity Boron retardants

· High-purity Boron welding agents

· High-purity Boron explosives

· High-purity Boron fuel-rich / oxygen-lean rocket propellants

VI. Alloys & Metallurgy

· High-purity Boron-copper alloys

· High-purity Boron-titanium alloys

· High-purity Boron-doped polycrystalline diamond

· High-purity Boron super-hard wear-resistant tools

· High-purity Boron corrosion-resistant steel plates

· High-purity Boron-nickel alloys

· High-purity Boron-chromium alloys

· Lithium-Boron alloys (for next-generation battery materials)

· Boron-magnesium superconducting alloys

VII. Surface Coatings (Nanopowder Materials)

· High-purity Boron nano-coating powder materials are deposited onto substrate surfaces via sputtering, imparting the following properties to components:

o Wear resistance

o Corrosion resistance

o High-temperature resistance

o Oxidation resistance

o Aging resistanc

· Meets the extreme operating requirements of aerospace engines and other harsh environments (e.g., optoelectronic, magnetic properties).

 

Our Company solemnly undertakes the following:

We shall not conduct research & development, customization, production,trading or export of elemental boron powder that meets both of the two criteria below:

1.Particle size less than 500 micrometres (regardless of particle morphology);

2. Boron content ≥ 97% by weight.

Boron powder of this specification can serve as raw material for solid propellants and military energetic materials, and is subject to China’s export control regulations.

All our overseas customers are required to submit a written End-User Certificate (EUC). The certificate must specify complete end-user information and the genuine end-use of the goods, and include the undertakings as follows: The goods shall not be utilized for nuclear facilities, military applications or the manufacture of any weapons; resale, transfer or reexport of the goods to any third party is prohibited without prior written approval from the Ministry of Commerce of the People’s Republic of China.

Our Company will retain all EUC documents completely and conduct ongoing risk verification. Should any counterparty breach the above undertakings, we will immediately terminate all cooperation and report the matter to relevant regulatory authorities.